Mobility modulation of two-dimensional hole gas in a p-type Si/SiGe modulation doped heterostructure by back-gating
- 1 December 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (12) , 1477-1479
- https://doi.org/10.1088/0268-1242/13/12/003
Abstract
No abstract availableKeywords
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