Schottky barrier characteristics of ternary silicide Co1−xNixSi2 on n-Si(100) contacts formed by solid phase reaction of multilayer
- 31 July 2004
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 48 (7) , 1205-1209
- https://doi.org/10.1016/j.sse.2004.02.006
Abstract
No abstract availableKeywords
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