CHEMICAL AND STRUCTURAL CHARACTERIZATION OF Co–Ni SILICIDE THIN FILMS
- 1 October 2002
- journal article
- Published by World Scientific Pub Co Pte Ltd in Surface Review and Letters
- Vol. 9 (5) , 1661-1666
- https://doi.org/10.1142/s0218625x02004177
Abstract
By means of pulsed laser deposition we prepared Co–Ni/p-Si thin films upon a Si(100) substrates. Samples were thermally treated in vacuum in order to promote silicide formation. From X-ray photo-electron spectroscopy (XPS) analysis, we detected chemical shifts of the Co2p and Ni2p transitions, characteristic of silicide binding energy, at the respective ranges of 778.3–778.6 and 853.2–853.6 eV. By means of high resolution transmission electron microscopy (HRTEM) we identified some nanocrystalline regions belonging to CoSi 2, Ni 2 Si and NiSi 2 structures. We also appreciate that the resulting films are of a polycrystalline nature.Keywords
This publication has 18 references indexed in Scilit:
- Interaction of Co with SiGe epilayer grown on Si(100)Surface Science, 1999
- Analysis of the diffusion controlled growth of cobalt silicides in bulk and thin film couplesJournal of Materials Research, 1995
- Process Windows of Nickel and Platinum Silicides in Deep Sub-Micron RegimeMRS Proceedings, 1995
- Theoretical Considerations about Phase Growth and Phase FormationMRS Proceedings, 1995
- Low Temperature Silicides for Poly-Silicon Thin Film Transistor ApplicationsMRS Proceedings, 1995
- Reaction of Amorphous Silicon with Cobalt and Nickel Silicides Before Disilicide FormationMRS Proceedings, 1995
- Silicide formation in the Co-Si system by rapid thermal annealingThin Solid Films, 1994
- Transition metal silicides in silicon technologyReports on Progress in Physics, 1993
- The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solutionThin Solid Films, 1986
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983