Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN
- 30 April 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 237-239, 951-955
- https://doi.org/10.1016/s0022-0248(01)02011-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Realization of crack-free and high-quality thick Al Ga1−N for UV optoelectronics using low-temperature interlayerApplied Surface Science, 2000
- Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n PhotodiodesJapanese Journal of Applied Physics, 2000
- Microscopic Investigation of Al0.43Ga0.57N on SapphireJapanese Journal of Applied Physics, 1999
- Low-Intensity Ultraviolet Photodetectors Based on AlGaNJapanese Journal of Applied Physics, 1999
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society, 1990
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Effect of AlN Buffer Layer on AlGaN/α-Al2O3Heteroepitaxial Growth by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986