Passivation of interface defects in lattice-mismatched InGaAs/GaAs heterostructures with hydrogen
- 15 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2) , 968-970
- https://doi.org/10.1063/1.343475
Abstract
We have found that in lattice-mismatched partially strained InGaAs/GaAs heterostructures, defect states caused by misfit dislocations can be neutralized by hydrogenation. This was concluded from the effect of hydrogen on the photoluminescence spectra of partially strained GaAs/In0.17Ga0.83As/GaAs quantum wells. Hydrogenation was also found to significantly increase the band-gap emission of structures with layer thicknesses well above the critical layer thickness for the given composition.This publication has 9 references indexed in Scilit:
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