Observation of interface defects in strained InGaAs-GaAs by photoluminescence spectroscopy
- 1 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1377-1379
- https://doi.org/10.1063/1.342985
Abstract
We have described a number of new, broad-linewidth emission bands in the photoluminescence spectrum of strained InGaAs-GaAs single-quantum wells. The variation of the luminescence intensity as a function of layer thickness and excitation intensity suggests that these bands are caused by interface defects, most likely misfit dislocations at the InGaAs/GaAs interface.This publication has 13 references indexed in Scilit:
- Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopyApplied Physics Letters, 1988
- Photoluminescence in strained InGaAs-GaAs heterostructuresJournal of Applied Physics, 1987
- Characterization of interface defects in GaAs-GaAlAs superlatticesApplied Physics Letters, 1987
- Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InPApplied Physics Letters, 1987
- Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffractionApplied Physics Letters, 1987
- Low temperature photoluminescence of GaxIn1−xAs/GaAs strained layer superlatticesSuperlattices and Microstructures, 1986
- Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructuresJournal of Applied Physics, 1986
- Photoluminescence line shape of excitons in alloy semiconductorsPhysical Review B, 1986
- Localization induced electron-hole transition rate enhancement in GaAs quantum wellsApplied Physics Letters, 1984
- Doping and transport studies in InxGa1−xAs/GaAs strained-layer superlatticesJournal of Vacuum Science & Technology B, 1983