Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers
- 22 June 2003
- journal article
- research article
- Published by Springer Nature in Nature Materials
- Vol. 2 (7) , 482-486
- https://doi.org/10.1038/nmat929
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Theory of hydrogen in diamondPhysical Review B, 2002
- Hydrogen diffusion in B-ion-implanted and B-doped homo-epitaxial diamond: passivation of defects vs. passivation of B acceptorsDiamond and Related Materials, 2001
- Hydrogen-acceptor interactions in diamondDiamond and Related Materials, 2001
- Diffusion and thermal stability of hydrogen in homoepitaxial CVD diamond filmsDiamond and Related Materials, 2000
- Electronic states of phosphorus in diamondDiamond and Related Materials, 2000
- Phosphorus-doped chemical vapor deposition of diamondDiamond and Related Materials, 2000
- Hydrogen-boron interactions in-type diamondPhysical Review B, 1998
- Activation energy in low compensated homoepitaxial boron-doped diamond filmsDiamond and Related Materials, 1998
- The migration of interstitial H in diamond and its pairing with substitutional B and N: Molecular orbital theoryJournal of Materials Research, 1994
- Wide bandgap compound semiconductors for superior high-voltage unipolar power devicesIEEE Transactions on Electron Devices, 1994