Phonon-limited mobility in GaAlAs/GaAs heterostructures
- 1 September 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5) , 581-582
- https://doi.org/10.1063/1.95288
Abstract
A calculation of the phonon-limited mobility of electrons confined to the channel of a GaAlAs/GaAs heterostructure has been performed with full account of the quasi-two-dimensionality of the channel. At 77 K the results show a reduction of mobility of about 25% as electron density increases from threshold to 7×1011cm−2; at room temperature the mobility of pure bulk GaAs is found almost independent of confinement.Keywords
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