n+/p ultra-shallow junction formation with plasma immersion ion implantation
- 1 September 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (9) , 1489-1494
- https://doi.org/10.1016/s0026-2714(98)00037-7
Abstract
No abstract availableKeywords
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