Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique
- 31 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 431-434
- https://doi.org/10.1016/0167-9317(95)00280-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Channel profile engineering for MOSFET's with 100 nm channel lengthsIEEE Transactions on Electron Devices, 1995
- Electrical characteristics of scaled CMOSFET's with source/drain regions fabricated by 7° and 0° tilt-angle implantationsIEEE Transactions on Electron Devices, 1995
- Fabrication of GaN nanostructures by a sidewall-etchback processSemiconductor Science and Technology, 1994
- 20 nm linewidth platinum pattern fabrication using conformal effusive-source molecular precursor deposition and sidewall lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Generation of <50 nm period gratings using edge defined techniquesJournal of Vacuum Science & Technology B, 1983