Fabrication of GaN nanostructures by a sidewall-etchback process
- 1 March 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (3) , 338-340
- https://doi.org/10.1088/0268-1242/9/3/015
Abstract
GaN structures as small as 300 AA have been fabricated using conventional optical lithography by employing a deposition/selective etchback technique. After initial resist patterning conformal plasma-enhanced chemical vapour deposition or reactive sputtering of a metal (W or WSix) or a low temperature dielectric (SiNx or SiO2) is followed by an anisotropic etchback to leave a thin sidewall on the resist feature. The resist is then removed by dry etching, leaving the sidewall, which can be used as a mask for subsequent pattern transfer into the underlying GaN. Electron cyclotron resonance dry etching in CH4/H2/Ar discharges is shown to produce GaN nanostructures without any change in the near-surface stoichiometry of the material.Keywords
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