A confocal photoluminescence study of metalorganic chemical vapor deposition growth on patterned GaAs substrates
- 15 March 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (6) , 3049-3055
- https://doi.org/10.1063/1.356152
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Cathodoluminescence investigation of lateral carrier confinement in GaAs/AlGaAs quantum wires grown by OMCVD on nonplanar substratesSurface Science, 1992
- Confocal photoluminescence: A direct measurement of semiconductor carrier transport parametersApplied Physics Letters, 1992
- Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved substratesApplied Physics Letters, 1992
- Thickness variations during MOVPE growth on patterned substratesJournal of Electronic Materials, 1990
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Single-longitudinal-mode cw room-temperature Ga1−xAlxAs-GaAs channel-guide lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1977
- Self-masking selective epitaxy by molecular-beam methodJournal of Applied Physics, 1977