Thermal management to avoid the collapse of current gain in power heterojunction bipolar transistors
- 19 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 147-150
- https://doi.org/10.1109/gaas.1995.528981
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Thermal modeling, measurements and design considerations of GaAs microwave devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A backside via process for thermal resistance improvement demonstrated using GaAs HBTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1996
- Thermal coupling in 2-finger heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1995
- A survey of thermal-electric feedback coefficients in GaAs-based heterojunction bipolar transistorsSolid-State Electronics, 1995
- Novel HBT with reduced thermal impedanceIEEE Microwave and Guided Wave Letters, 1995
- Coplanar waveguide based, dielectric coated flip chip monolithic microwave integrated circuit, a paradigm shift in MMIC technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- Measurement of junction temperature of an AlGaAs/GaAs heterojunction bipolar transistor operating at large power densitiesIEEE Transactions on Electron Devices, 1995
- The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modelingIEEE Transactions on Electron Devices, 1994
- Theoretical calculations of temperature and current profiles in multi-finger heterojunction bipolar transistorsSolid-State Electronics, 1993