Heteroepitaxial Growth of Quaternary BaxSr1-xTiO3 Thin Films by ArF Excimer Laser Ablation

Abstract
Highly polarizable Ba x Sr1- x TiO3 (x=0∼1) (BSTO) thin films have been grown heteroepitaxially by the ArF excimer laser ablation method. They were characterized by X-ray diffraction, reflection high-energy electron diffraction (RHEED), capacitance-voltage (C-V), Fourier transform infrared (FTIR) and UV spectroscopic measurements, and x-dependent properties were studied systematically. The dielectric properties of the epitaxial BSTO films were consistent with data from ceramic bulk. However, the optical probes (FTIR and UV spectrometry) indicated the occurrence of microscopic composition fluctuation in the quaternary systems.