Fabrication of Low-Threshold AlGaAs/GaAs Patterned Quantum Well Laser Grown on Si Substrate

Publisher Website
Google Scholar
Abstract
A low-threshold AlGaAs/GaAs patterned quantum well laser has been fabricated on a V-grooved GaAs/Si substrate using metal-organic chemical vapor deposition. High-resolution scanning electron microscope images show that the GaAs active layers with reduced volume are crescent-shaped, whose thicknesses are about 20∼25 nm and widths are about 75∼125 nm. The laser with a 300-µm-long cavity has exhibited the continuous-wave threshold current of as low as 16 mA at 300 K, which is the lowest value for the GaAs-based conventional quantum well lasers on Si.