Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 389-394
- https://doi.org/10.1016/s0921-5107(98)00540-6
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine TeslaMaterials Science Forum, 1998
- Admittance Spectroscopy of 6H, 4H, and 15R Silicon CarbidePhysica Status Solidi (a), 1997
- Electronic Band Structure of SiC Polytypes: A Discussion of Theory and ExperimentPhysica Status Solidi (b), 1997
- Global Band Structure and Near-Band-Edge StatesPhysica Status Solidi (b), 1997
- Design and Performance of a New Reactor for Vapor Phase Epitaxy of 3C, 6H, and 4H SiCJournal of the Electrochemical Society, 1996
- Theory and Realization of a Two-Layer Hall Effect Measurement Concept for Characterization of Epitaxial and Implanted Layers of SiCMRS Proceedings, 1996
- Nitrogen donors in 4H-silicon carbideJournal of Applied Physics, 1993
- Analysis of temperature dependence of Hall mobility of nondoped and nitrogen-doped β-SiC single crystals grown by chemical vapor depositionJournal of Applied Physics, 1988
- Site effect on the impurity levels in,, andSiCPhysical Review B, 1980
- Theory and application of a two-layer Hall techniqueIEEE Transactions on Electron Devices, 1980