Metal-Organic Chemical Vapor Deposition of Aluminum from Trialkylamine Alanes
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The adsorption and thermal decomposition of trimethylamine alane on aluminum and silicon single crystal surfaces: kinetic and mechanistic studiesSurface Science, 1990
- Laser-induced chemical vapor deposition of aluminumApplied Physics Letters, 1989
- Chemical vapor deposition of aluminum from trimethylamine-alaneJournal of Vacuum Science & Technology A, 1989
- Trimethylamine complexes of alane as precursors for the low-pressure chemical vapor deposition of aluminumChemistry of Materials, 1989
- Surface organometallic chemistry in the chemical vapor deposition of aluminum films using triisobutylaluminum: .beta.-hydride and .beta.-alkyl elimination reactions of surface alkyl intermediatesJournal of the American Chemical Society, 1989
- Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI ProcessingJapanese Journal of Applied Physics, 1988
- Characterization of LPCVD Aluminum for VLSI ProcessingJournal of the Electrochemical Society, 1984
- Effect of texture and grain structure on electromigration in Al-0.5%Cu thin filmsThin Solid Films, 1981
- Lewis acidity of alanes. Interactions of trimethylalane with amines, ethers, and phosphinesInorganic Chemistry, 1968
- The Amine Complexes of Aluminum Hydride. I.Journal of the American Chemical Society, 1960