Thermal emission rates and capture cross sections of majority carriers at vanadium centers in silicon
- 1 July 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (7) , 759-764
- https://doi.org/10.1016/0038-1101(80)90134-3
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Recombination; a surveySolid-State Electronics, 1978
- Non-radiative de-excitation of deep centresSolid-State Electronics, 1978
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Relationships between the nonradiative multiphonon carrier‐capture properties of deep charged and neutral centres in semiconductorsPhysica Status Solidi (b), 1976
- Thermal capture cross-section of free electrons at neutral gold centres in n-type siliconPhysica Status Solidi (a), 1976
- Determination of the temperature independence of the capture cross-section of the gold acceptor level for electrons in n-type siliconPhysica Status Solidi (a), 1975
- Quenched-in centers in silicon p+n junctionsSolid-State Electronics, 1974
- Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experimentsSolid-State Electronics, 1970
- On the theory of the thermal capture of electrons in semi-conductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- Properties of Gold-Doped SiliconPhysical Review B, 1957