Effect of the confinement-layer composition on the internal quantum efficiency and modulation response of quantum-well lasers

1 August 1992

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 4 (8) , 832-834
https://doi.org/10.1109/68.149878

Abstract

The authors show that the transport factor X is related to the internal quantum efficiency eta /sub i/ of the quantum-well laser, and the enhancement in X contributes significantly to a reduction of eta /sub i/. It is also shown that suppression of the thermionic emission of carriers out of the quantum well is essential to prevent the degradation of the effective differential gain in high-speed quantum-well lasers.<>

Keywords

This publication has 10 references indexed in Scilit:

Modulation characteristics of short-cavity strained-layer lasers
Published by SPIE-Intl Soc Optical Eng ,1992
Transport limits in high-speed quantum-well lasers: experiment and theory
IEEE Photonics Technology Letters, 1992
Comparison of differential gain in single quantum well and bulk double heterostructure lasers
Electronics Letters, 1991
Effects of carrier transport on high-speed quantum well lasers
Applied Physics Letters, 1991
Well-barrier hole burning in quantum well lasers
IEEE Photonics Technology Letters, 1991
High-speed InGaAs/GaAs strained multiple quantum well lasers with low damping
Applied Physics Letters, 1991
Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current
IEEE Journal of Quantum Electronics, 1989
Thermionic emission and Gaussian transport of holes in a GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple-quantum-well structure
Physical Review B, 1988
Threshold current of single quantum well lasers: The role of the confining layers
Applied Physics Letters, 1986
Carrier collection in a semiconductor quantum well
Solid State Communications, 1978