Temperature dependence of oxidation induced stacking faults and oxygen incorporation in dislocation-free Czochralski silicon
- 31 March 1989
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (3) , 803-806
- https://doi.org/10.1016/0022-0248(89)90107-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Stresses near the solid-liquid interface during the growth of a Czochralski crystalJournal of Crystal Growth, 1987
- Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si filmsJournal of Applied Physics, 1986
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growthJournal of Crystal Growth, 1986
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growthJournal of Crystal Growth, 1986
- Microscopic growth mechanisms of semiconductors: Experiments and modelsJournal of Crystal Growth, 1984
- The effect of temperature oscillations at the growth interface on crystal perfectionJournal of Crystal Growth, 1984
- Influence of growth conditions on melt interface temperature oscillations in silicon czochralski growthJournal of Crystal Growth, 1983
- Temperature oscillation at the growth interface in silicon crystalsJournal of Crystal Growth, 1983
- Thermally Induced Microdefects in Czochralski-Grown Silicon: Nucleation and Growth BehaviorJapanese Journal of Applied Physics, 1982
- A critical pulling rate for remelt suppression in silicon crystal growthJournal of Crystal Growth, 1981