Mechanism for ordering in SiGe films with reconstructed surface
- 1 September 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (9) , 1174-1176
- https://doi.org/10.1063/1.119617
Abstract
A model of the ordering mechanism in SiGe films is developed to explain the occurrence of two types of ordered structures. We investigate the stability of ordered structures by strain energy calculation. It is suggested that atomic diffusion, which is enhanced by strain in a film, influences the formation of ordered structures. The process of atomic exchange that forms the ordered structure at a reconstructedsurface during growth is also discussed.Keywords
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