32K and 16K MOS RAMs using laser redundancy techniques
- 1 January 1982
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Cost-effective yield improvement in fault-tolerant VLSI memoryPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- A 100ns 64K dynamic RAM using redundancy techniquesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1981
- A 256K RAM fabricated with molybdenum-polysilicon technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- A fault-tolerant 64K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979