An all-electrical floating-gate transmission line model technique for measuring source resistance in heterostructure field-effect transistors
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (9) , 2105-2107
- https://doi.org/10.1109/16.57178
Abstract
No abstract availableKeywords
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