Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
- 1 June 2009
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 26 (6) , 064211
- https://doi.org/10.1088/0256-307x/26/6/064211
Abstract
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9kA/cm2 and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.Keywords
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