Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations
- 1 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 50 (1-3) , 82-87
- https://doi.org/10.1016/s0921-5107(97)00173-6
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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