Specific contact resistance extraction from four-point-probe measurements on multilayered film structures
- 31 March 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (3) , 279-283
- https://doi.org/10.1016/0038-1101(91)90185-2
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A comparison of semiconductor devices for high-speed logicProceedings of the IEEE, 1982
- A transmission line model for silicided diffusions: Impact on the performance of VLSI circuitsIEEE Transactions on Electron Devices, 1982
- The effects of contact size and non-zero metal resistance on the determination of specific contact resistanceSolid-State Electronics, 1982
- Specific contact resistance using a circular transmission line modelSolid-State Electronics, 1980
- Aluminum-silicon ohmic contact on “shallow” junctionsSolid-State Electronics, 1980
- Contact resistance in metal-semiconductor systemsSolid-State Electronics, 1979
- A study of the contacts of a diffused resistorSolid-State Electronics, 1971
- Contact Resistance in Diffused ResistorsJournal of the Electrochemical Society, 1970
- Messung des übergangswiderstandes zwischen metall und diffusionsschicht in Si-planarelementenSolid-State Electronics, 1969
- Evaluation of the interfacial resistance of thin film interconnexionsMicroelectronics Reliability, 1968