Reciprocity in heterojunction bipolar transistors

This publication has 11 references indexed in Scilit:

• The cut-off frequency of base-graded and junction-graded AlxGa1−xAs DHBTs
  Solid-State Electronics, 1991
• The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1989
• Emitter-collector reciprocity of double heterojunction bipolar transistors: A three-dimensional analysis and proof for transistors with heavily doped and degenerate base regions
  Journal of Applied Physics, 1988
• An Ebers-Moll model for the heterostructure bipolar transistor
  Solid-State Electronics, 1986
• Transport theory of the double heterojunction bipolar transistor based on current balancing concept
  Journal of Applied Physics, 1986
• Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
  Solid-State Electronics, 1985
• An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
  IEEE Transactions on Electron Devices, 1984
• Boundary conditions for pn heterojunctions
  Solid-State Electronics, 1984
• Heterostructure bipolar transistors and integrated circuits
  Proceedings of the IEEE, 1982
• Electrical behavior of an NPN GaAlAs/GaAs heterojunction transistor
  Solid-State Electronics, 1979