Synchrotron radiation-assisted silicon homoepitaxy at 100 °C using Si2H6/H2 mixture

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Abstract
Epitaxial silicon film is deposited on a Si(100) substrate by synchrotron radiation irradiation. Reflection high-energy electron diffraction and high-resolution transmittance electron microscopy observation reveal that epitaxial growth can be realized at temperatures as low as 100 °C. At substrate temperatures above 300 °C, the films show a clear 2×1 reconstructed surface, indicating a fairly good crystal quality. Below 500 °C, the growth rate increases as the substrate temperature is lowered, meaning that the surface adsorption of source gas and/or photogenerated radicals plays an important role in the epitaxial growth reaction.