Cathodoluminescence characterization of Ge-doped CdTe crystals
- 1 August 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (3) , 1992-1995
- https://doi.org/10.1063/1.360173
Abstract
Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 1017 and 1019 cm−3 on the compensation of VCd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.This publication has 13 references indexed in Scilit:
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