Liquid Phase Epitaxial Growth of lnGaAsP on GaAs1-yPy Substrates (y=0.31 and 0.39)

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Abstract
Lattice matched InGaAsP mixed crystals with various energy bandgaps were grown by liquid phase epitaxy (LPE) on GaAs1-y P y substrates (y=0.31 and 0.39). The growth layers had smooth and shiny surfaces with undulated morphology reflecting the cross-hatching pattern of GaAsP substrates. The influences of offset angle and crystal composition of the InGaAsP growth layer on the surface morphology of the InGaAsP growth layer were investigated. The offset angle was not the main cause of the undulated morphology in our experiments. Photoluminescence spectra and X-ray rocking curves of the growth layers were measured in order to determine their energy bandgaps and lattice constants. The doping characteristics of zinc and tellurium were also investigated. The growth conditions and properties of the InGaAsP layers on GaAsP substrates are described in detail.