Self-consistent band-edge deformation potentials in a tight-binding framework
- 15 December 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (18) , 13451-13452
- https://doi.org/10.1103/physrevb.38.13451
Abstract
In a recent work [Phys. Rev. B 37, 8519 (1988)], we have shown how it is possible to derive a ‘‘universal analytical expression’’ for the dependence of tight-binding parameters upon distance that provides, for seven III-V compounds, deformation potentials in reasonable agreement with available experimental data. This work corresponded to non-self-consistent calculations. As the tight-binding treatment of strained heterojunctions like InAs/GaAs requires a self-consistent description of deformation potentials, here we study the effect of self-consistency for hydrostatic and uniaxial [100] strains.Keywords
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