Impact of ion energy on single-event upset

This publication has 23 references indexed in Scilit:

• Challenges in hardening technologies using shallow-trench isolation
  IEEE Transactions on Nuclear Science, 1998
• Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs
  IEEE Transactions on Nuclear Science, 1998
• Comparison of single event phenomena for front/back irradiations
  IEEE Transactions on Nuclear Science, 1997
• Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs]
  IEEE Transactions on Nuclear Science, 1997
• Impact of technology trends on SEU in CMOS SRAMs
  IEEE Transactions on Nuclear Science, 1996
• Single Event Upset cross sections at various data rates
  IEEE Transactions on Nuclear Science, 1996
• SEU characterization of a hardened CMOS 64K and 256K SRAM
  IEEE Transactions on Nuclear Science, 1989
• Influences on soft error rates in static RAMs
  IEEE Journal of Solid-State Circuits, 1987
• The Size Effect of Ion Charge Tracks on Single Event Multiple-Bit Upset
  IEEE Transactions on Nuclear Science, 1987
• Heavy-Ion Track Structure in Silicon
  IEEE Transactions on Nuclear Science, 1979