Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs
- 31 December 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (12) , 1857-1861
- https://doi.org/10.1016/0038-1101(89)90325-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Computer simulation of a dual gate GaAs field-effect transistor using the Monte Carlo methodIEE Journal on Solidstate and Electron Devices, 1979
- Monte Carlo high-field transport in degenerate GaAsJournal of Physics C: Solid State Physics, 1976