Two-dimensional Monte Carlo simulation of a submicron GaAs MESFET with a nonuniformly doped channel
- 30 November 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (11) , 1105-1109
- https://doi.org/10.1016/0038-1101(85)90191-1
Abstract
No abstract availableKeywords
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