Atomic Layer Epitaxy
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Atomic layer epitaxy of planar-doped structures for nonalloyed contacts and field-effect transistorApplied Physics Letters, 1990
- InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxyApplied Physics Letters, 1990
- Growth of InGaAs/InAlAs quantum wells on InP patterned substrates by molecular beam epitaxyApplied Physics Letters, 1990
- Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon-doped baseIEEE Electron Device Letters, 1988
- Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaClJapanese Journal of Applied Physics, 1988
- Atomic layer epitaxy of the Ga-As-In-As superalloyApplied Physics Letters, 1987
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983
- Modeling of chemical vapor depositionJournal of Crystal Growth, 1982
- Vapor growth kinetics of III–V compounds in a hydrogen-inert gas mixed carrier systemJournal of Crystal Growth, 1975
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968