Theory of alloys. III. Embedded-cluster calculations of electronic spectra for a one-dimensional ternary alloy
- 15 September 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 30 (6) , 3283-3293
- https://doi.org/10.1103/physrevb.30.3283
Abstract
The embedded-cluster method is modified to treat electronic spectra in ternary alloys and is applied to the calculation of the electronic density of states for the one-dimensional, one-state-peratom, ternary alloy in the nearest-neighbor tight-binding approximation. As a test of this method, the spectra for some representative cases of alloys in the "persistence" and "amalgamation" regimes are presented and compared with "exact" spectra for the same cases obtained for 10 000-atom random chains by the use of the negative-eigenvalue theorem. For a cluster containing eight unit cells embedded in a coherent-potential-approximation effective medium, the embedded-cluster method reproduces all of the major features of the exact spectra for all alloy compositions and over wide range of atomic energies of the alloy constituents.
Keywords
This publication has 34 references indexed in Scilit:
- Tight-binding view of alloy scattering in III-V ternary semiconducting alloysPhysical Review B, 1984
- Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary AlloysPhysical Review Letters, 1984
- The coherent potential approximation in disordered semiconducting alloysJournal of Vacuum Science and Technology, 1982
- Calculation of the electronic properties of pseudo-binary semiconductor alloysPhysical Review B, 1981
- Electronic structure of pseudobinary semiconductor alloys , , andPhysical Review B, 1981
- Room-temperature conductivity and the band structure of n-Ga1−xAlxAsJournal of Applied Physics, 1980
- Electron mobility in compensated GaAs and AlxGa1−xAsJournal of Applied Physics, 1980
- Electron transport and band structure ofalloysPhysical Review B, 1980
- Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAsJournal of Luminescence, 1979
- Nitrogen isoelectronic trap in : II. Model calculation of the electronic states and at low temperaturePhysical Review B, 1977