Excited states of neutral defects in semiconductors
- 20 August 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (23) , L743-L747
- https://doi.org/10.1088/0022-3719/15/23/004
Abstract
It is shown that the range of realistic potentials associated with neutral defects in semiconductors is insufficient to give rise to an effective mass-like excited state normally expected for a number of shallow and deep substitutional donors. In particular, it is shown that the state of e symmetry associated with the self-consistent potential of a neutral oxygen impurity in the perfect lattice of GaP does not lie in the forbidden gap.Keywords
This publication has 4 references indexed in Scilit:
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- Deep levels in semiconductorsAdvances in Physics, 1980
- Valley-orbit interaction and effective-mass theory for indirect gap semiconductorsJournal of Physics C: Solid State Physics, 1977
- Two-electron impurity states in GaP:OJournal of Physics C: Solid State Physics, 1975