On the stress-induced electrical properties of point defects in the sphalerite structure. II. The piezoresistance effect
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2) , 1050-1052
- https://doi.org/10.1063/1.326079
Abstract
It is shown that point defects in a crystal of the sphalerite structure can give rise to spatial variations in the tensor conductivity around them due to the piezoresistance effect. The expressions for these conductivity variations are derived for a general crystal of the sphalerite structure and are then applied to the particular case of n‐type GaSb.This publication has 5 references indexed in Scilit:
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- The piezoresistance effect and dislocations in III‐V compoundsJournal of Applied Physics, 1978
- Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasersJournal of Applied Physics, 1974
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- Macroscopic Symmetry and Properties of CrystalsPublished by Elsevier ,1958