Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices
- 1 June 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (6) , 667-673
- https://doi.org/10.1007/bf02666415
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Ultra Shallow Junction Formation Using Diffusion from Silicides: III . Diffusion into Silicon, Thermal Stability of Silicides, and Junction IntegrityJournal of the Electrochemical Society, 1992
- WSi2 and CoSi2 as diffusion sources for shallow-junction formation in siliconJournal of Applied Physics, 1991
- Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistanceJournal of Applied Physics, 1991
- Anomalous current-voltage behavior in titanium-silicided shallow source/drain junctionsJournal of Applied Physics, 1990
- Thermal Stability of CoSi2 on Single Crystal and Polycrystalline SiliconMRS Proceedings, 1990
- Agglomeration of Cobalt Silicide FilmsMRS Proceedings, 1990
- Quantitative secondary ion mass spectrometry depth profiling of TiSi2 filmsJournal of Vacuum Science & Technology A, 1989
- A study of the leakage mechanisms of silicided n+/p junctionsJournal of Applied Physics, 1988
- Shallow Junction Formation by the Redistribution of Species Implanted into Cobalt SilicideMRS Proceedings, 1987
- Junction leakage in titanium self-aligned silicide devicesApplied Physics Letters, 1986