Effects of the i-layer properties and impurity on the performance of a-Si solar cells
- 1 September 1994
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 34 (1-4) , 303-312
- https://doi.org/10.1016/0927-0248(94)90054-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Principles for controlling the optical and electrical properties of hydrogenated amorphous silicon deposited from a silane plasmaJournal of Applied Physics, 1993
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin FilmsJapanese Journal of Applied Physics, 1991
- Narrow Band-Gap a-Si:H with Improved Minority Carrier-Transport Prepared by Chemical AnnealingJapanese Journal of Applied Physics, 1991
- Controlling hydrogen contents and bond configurations for high-quality and high-reliability a-Si filmsJournal of Non-Crystalline Solids, 1989
- Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous siliconJournal of Applied Physics, 1989
- Light-Induced Effect of a-Si Films Fabricated Using the Super ChamberJapanese Journal of Applied Physics, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Silicon Thin-Film Formation by Direct Photochemical Decomposition of DisilaneJapanese Journal of Applied Physics, 1983
- Amorphous thin films for terrestrial solar cellsJournal of Vacuum Science and Technology, 1982