Identification of paramagnetic AsGa and optical EL2 centers in semi-insulating gallium arsenide

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Abstract
After a brief recall of our main results obtained during a recent theoretical cluster calculation on anion antisite‐related defects in GaAs, we discuss the consequences of their resonance parameters. Experimentally, we perform a detailed analysis of the electron paramagnetic resonance data in plastically deformed undoped and Cr‐doped semi‐insulating materials in conjunction with simultaneous EL2° optical absorption measurements. Combining theoretical calculations and experimental results, we are able to identify the ‘‘As+Ga’’ spectrum as a superposition of spectra ascribed to the isolated As+Ga and to its binary and ternary vacancy complexes, whereas the ternary complex AsGaVGaVAs only is believed to be the probable configuration for EL2.