Fabrication and total dose testing of a 256 K*1 radiation-hardened SRAM
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1667-1669
- https://doi.org/10.1109/23.25518
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Radiation hard 1.0μm CMOS technologyIEEE Transactions on Nuclear Science, 1987
- Scaling studies of CMOS SRAM soft-error tolerances—From 16K to 256KPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Two-13 ns-64K CMOS SRAM's with very low active power and improved asynchronous circuit techniquesIEEE Journal of Solid-State Circuits, 1986
- A fault-tolerant 64K dynamic RAMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979