Transient annealing of ion implanted indium phosphide
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 174-180
- https://doi.org/10.1016/0022-0248(83)90266-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Multiply scanned electron beam annealing of ion implanted indium phosphideApplied Physics Letters, 1982
- Incoherent annealing of implanted layers in GaAsIEEE Electron Device Letters, 1982
- Rutherford back-scattering and ellipsometry of selenium implanted InPJournal of Physics D: Applied Physics, 1981
- Annealing of Si 3 N 4 -capped ion-implanted InPElectronics Letters, 1981
- Activation of low dose silicon implants in GaAs by multiply scanned electron beamsElectronics Letters, 1980