Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen
- 22 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (12) , 728-730
- https://doi.org/10.1063/1.97581
Abstract
Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm−2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries resulting from the argon implant. Extremely high Schottky barrier heights on p-type Si, up to 0.88 eV, are also found to result from the implantation of both argon and atomic hydrogen.Keywords
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