Formation and Thermal Stability of End-of-Range Defects in Ge Implanted Silicon

This publication has 9 references indexed in Scilit:

• Formation of End-of-Range Defects in Silicon at Low Temperatures
  MRS Proceedings, 1992
• The effect of implant energy, dose, and dynamic annealing on end-of-range damage in Ge+-implanted silicon
  Journal of Applied Physics, 1991
• A systematic analysis of defects in ion-implanted silicon
  Applied Physics A, 1988
• Enhanced elimination of implantation damage upon exceeding the solid solubility
  Journal of Applied Physics, 1987
• The effect of implant species on defect anneal kinetics part II: Arsenic and germanium implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• The effect of implant species on defect anneal kinetics part I: Silicon and phosphorus implantation
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• A review of rapid thermal annealing (RTA) of B, BF 2 and As ions implanted into silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• The structure and formation of rod defects in ion-implanted silicon
  Philosophical Magazine A, 1981
• Point Defects and Diffusion
  Physics Today, 1973