Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system
- 6 February 2004
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 14 (4) , 656-662
- https://doi.org/10.1088/0960-1317/14/4/029
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Balancing the etching and passivation in time-multiplexed deep dry etching of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Pattern shape effects and artefacts in deep silicon etchingJournal of Vacuum Science & Technology A, 1999
- Recent advances in silicon etching for MEMS using the ASE™ processSensors and Actuators A: Physical, 1999
- Characterization of a Time Multiplexed Inductively Coupled Plasma EtcherJournal of the Electrochemical Society, 1999
- BSM 7: RIE lag in high aspect ratio trench etching of siliconMicroelectronic Engineering, 1997
- Etching processes for High Aspect Ratio Micro Systems Technology (HARMST)Microsystem Technologies, 1996
- Advanced silicon etching using high-density plasmasPublished by SPIE-Intl Soc Optical Eng ,1995
- High-aspect-ratio Si etching for microsensor fabricationJournal of Vacuum Science & Technology A, 1995