Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 2 (2) , 418-424
- https://doi.org/10.1109/2944.577404
Abstract
An InP-based photoreceiver OEIC for lambda =1.55 mu m with a bandwidth of 27 GHz is reported. The receiver design, fabrication and characterization is presented. The device consists of an optical waveguide-fed pin-photodiode and a coplanar traveling-wave amplifier being composed of four GaInAs-AlInAs-InP-HEMT's. The photodiode exhibits an external quantum efficiency of 30% and a 3-dB power bandwidth of 35 GHz. HEMT's with 0.7- mu m gate length, integrated on semi-insulating optical waveguide layers show cutoff frequencies fT/fmax of 37/100 GHz at zero gate bias. Traveling-wave amplifiers with 0.5- mu m gate HEMT's have 28-GHz bandwidth. The receiver OEIC is packaged into a module with fiber pigtail and operates successfully within an SDH based 20-Gb/s transmission system. An overall system sensitivity of -30.5 dBm was achieved at a BER=10-9 after signal transmission over 198-km dispersion shifted fiberKeywords
This publication has 8 references indexed in Scilit:
- Towards a 40 Gb/s electrical time division multiplexed optical transmission systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Application of InP HEMT devices to millimeter-wave MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFETIEEE Transactions on Microwave Theory and Techniques, 1997
- Development of a low-impedance traveling wave amplifier based on InAlAs/InGaAs/InP-HFET for 20 Gb/s optoelectronic receiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- 15 Gbit/s pin /HBT optoelectronic integratedphotoreceiver module realisedusing MOVPE materialElectronics Letters, 1995
- 15 GHz monolithic MODFET-MSM integrated photoreceiveroperatingat 1.55 µm wavelengthElectronics Letters, 1995