Comparison of threshold transient upset levels induced by flash X-rays and pulsed lasers
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1512-1516
- https://doi.org/10.1109/23.25489
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Dose-Rate Upset Patterns in a 16K CMOS SRAMIEEE Transactions on Nuclear Science, 1986
- Factors Contributing to Cmos Static Ram UpsetIEEE Transactions on Nuclear Science, 1986
- Analysis of Transient Radiation Upset in a 2K SRAMIEEE Transactions on Nuclear Science, 1985
- Transient Radiation Upset Simulations of CMOS Memory CircuitsIEEE Transactions on Nuclear Science, 1984
- Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor DevicesIEEE Transactions on Nuclear Science, 1984
- Transient Radiation Screening of Silicon Devices Using Backside Laser IrradiationIEEE Transactions on Nuclear Science, 1982
- Use of a Pulsed Laser as an Aid to Transient Upset Testing of I2L LSI MicrocircuitsIEEE Transactions on Nuclear Science, 1978
- The Use of Lasers to Simulate Radiation-Induced Transients in Semiconductor Devices and CircuitsIEEE Transactions on Nuclear Science, 1965
- The Transient Response of Transistors and Diodes to Ionizing RadiationIEEE Transactions on Nuclear Science, 1964