Room-temperature 2.2-μm InAs-InGaAs-InP highly strained multiquantum-well lasers grown by gas-source molecular beam epitaxy
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 34 (10) , 1959-1962
- https://doi.org/10.1109/3.720233
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- High-temperature type-II superlattice diode laser at λ=2.9 μmApplied Physics Letters, 1997
- Low-threshold quasi-cw type-II quantum well lasers at wavelengths beyond 4 μmApplied Physics Letters, 1997
- MOCVD growth of InAsN for infrared applicationsSolid-State Electronics, 1997
- InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor depositionIEEE Photonics Technology Letters, 1997
- Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor depositionApplied Physics Letters, 1997
- InAsSb-based mid-infrared lasers (3.8–3.9 μm) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1996
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applicationsSolid-State Electronics, 1994
- Surface stoichiometry, epitaxial morphology and strain relaxation during molecular beam epitaxy of highly strained InAs/Ga0.47In0.53As heterostructuresJournal of Crystal Growth, 1994