A study of the breakdown testing of thermal silicon oxides and the effects of preoxidation surface treatment
- 7 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 7, 9-16
- https://doi.org/10.1109/relphy.1989.36310
Abstract
The properties of 175 AA thermal oxides have been studied using three testing methods (constant voltage, constant current, and ramped voltage) under a wide range of stressing conditions, along with wafer level statistics. Thus, the role of stress levels of accelerated testing and the effects of wafer surface treatment could be examined. In particular, a constant charge-to-breakdown Q/sub bd/ at low voltage and current stress levels is identified. The effect of preoxidation surface treatment is investigated using different wafer cleans, deliberate contamination, and other process variables such as dry and wet oxidations.Keywords
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